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Oscillation-Based Prebond TSV Test

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5 Author(s)
Li-Ren Huang ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Shi-Yu Huang ; Sunter, S. ; Kun-Han Tsai
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Testing the quality of prebond through-silicon vias (TSV) is a vital part of the Known-Good-Die test that is often necessary to retain a high compound yield for 3-D stacked integrated circuits. In this paper, we present a versatile prebond TSV test method applicable before wafer thinning when the deep end of the TSV is inaccessible as buried in the still-thick wafer. Technical merits include: 1) the ability to handle both the resistive open fault and the leakage fault in the same test structure; 2) a capability that allows an user to have a better measure of the severity of the fault; and 3) an all-digital and easy to implement design-for-testability circuit.

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:32 ,  Issue: 9 )