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Write stress reduction in 50nm AlxOy ReRAM improves endurance 1.4× and write time, energy by 17%

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3 Author(s)
Sheyang Ning ; Chuo Univ., Tokyo, Japan ; Iwasaki, T.O. ; Takeuchi, K.

Novel write verification methods are proposed to improve write speed, energy and endurance of resistive random access memory (ReRAM). Flexible write stress is implemented during reset w/ verification and set w/ verification, by which the pulse width or voltage can be decremented as well as incremented. Proposed reset w/ verification and set w/ verification methods are characterized by measuring 50nm AlxOy ReRAM devices and compared against conventional methods. Improvements of 1.9× average endurance increase, or 1.4× average endurance increase with 17% write time, the reset time plus set time decrease and 17% average write energy reduction are demonstrated.

Published in:

Memory Workshop (IMW), 2013 5th IEEE International

Date of Conference:

26-29 May 2013

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