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Stability conditioning to enhance read stability 10x in 50nm AlxOy ReRAM

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3 Author(s)
Iwasaki, T.O. ; Chuo Univ., Tokyo, Japan ; Sheyang Ning ; Takeuchi, K.

This study focuses on read stability after reset in 50nm AlxOy ReRAM. Unstable behaviors are characterized and a 2-part solution to reduce instability from 64 to 6% and read error from 8 to 0.2% is proposed. After conventional reset including verify, (i) a block-level low voltage sealing operation is followed by (ii) a stability check loop.

Published in:

Memory Workshop (IMW), 2013 5th IEEE International

Date of Conference:

26-29 May 2013

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