By Topic

Monolithic GaAs Electro-Optic IQ Modulator Demonstrated at 150 Gbit/s With 64QAM

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

19 Author(s)
Schindler, P.C. ; Inst. of Photonics & Quantum Electron., Karlsruhe Inst. of Technol., Karlsruhe, Germany ; Korn, D. ; Stamatiadis, C. ; O'Keefe, M.F.
more authors

We report on the experimental demonstration of a GaAs IQ modulator. The device consists of two “nested” Mach-Zehnder modulators for the inphase and quadrature component and is operated at a symbol rate of 25 GBd. Using QPSK, 16QAM, 32QAM and 64QAM, data rates of up to 150 Gbit/s were encoded on a single carrier in one polarization. The individual Mach-Zehnder modulators, and hence, the IQ-modulator have an electro-optic 3 dB bandwidth of 27 GHz and a 6 dB bandwidth larger than 35 GHz. The extinction ratio of the Mach-Zehnder exceeds 20 dB. The devices exhibit small footprint of 2 mm × 40 mm and can be integrated on large-area GaAs wafers using high-yield fabrication processes while providing performance similar to established lithium niobate devices.

Published in:

Lightwave Technology, Journal of  (Volume:32 ,  Issue: 4 )