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{\hbox {In}}_{2} {\hbox {O}}_{3} Thin Film Paper Transistors

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3 Author(s)
Florin Gherendi ; National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, Bucharest-Magurele, Romania ; Magdalena Nistor ; Nicolae B. Mandache

In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide (In2O3) thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 μm thickness was used. In2O3 thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to 6×104, limited mainly by the gate leakage. The transfer characteristics -Id (Vgs)- showed a memory effect with a threshold voltage of 0.8 V in “0” state and -3.6 V in “1” state. The drain current-voltage characteristics family -Id (Vds)- showed saturation currents up to 3.5 mA in “1”state and about 500 μA in “0” state. The subthreshold swing was 0.3-0.5 V/decade.

Published in:

Journal of Display Technology  (Volume:9 ,  Issue: 9 )