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Simulating the Radiation Response of GaAs Solar Cells Using a Defect-Based TCAD Model

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7 Author(s)
Marek Turowski ; CFD Research Corporation (CFDRC), Huntsville, AL, USA ; Timothy Bald ; Ashok Raman ; Alex Fedoseyev
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Three-dimensional TCAD simulations are used for physics-based prediction of space radiation effects in III-V solar cells, and compared with experimentally measured characteristics of a p+ n GaAs solar cell with AlGaAs window. Dark and illuminated I-V curves as well as corresponding performance parameters are computed and compared with experimental data for 2 MeV proton irradiation at various fluences. We analyze the role of majority and minority carrier traps in the solar cell performance degradation. The traps/defects parameters used in the simulations, for n-type and p-type GaAs, are derived from Deep Level Transient Spectroscopy (DLTS) data. The physics-based models allow a good match between simulation results and experimental data. However, assuming the device performance is dominated by a single recombination center is not adequate to completely capture the degradation mechanisms controlling the photovoltaic performance.

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IEEE Transactions on Nuclear Science  (Volume:60 ,  Issue: 4 )