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This study introduces an experimental method for determining the parasitic reactive components that appear in a thermoelectric module (TEM). In most cases, a TEM is referred to by taking into account only the constant values of the internal electrical resistance, Seebeck coefficient and thermal conductivity. The current research is focused on determining the parasitic reactive elements, inductance and capacitance that appear in a TEM. These values are linked to the semiconductor geometry and manufacturing process. The experimental results will be used afterwards to build an accurate thermoelectric device model suitable for designing and simulating TEM-based applications.