System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yamauchi, N. ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; Hajjar, J.-J.J. ; Reif, Rafael

Poly-Si thin-film transistors (TFTs) with channel dimensions (width W, and length L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W=L =2 μm. On the other hand, TFTs with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 1 )