Application of E-beam recrystallization to three-layer image processor fabrication

E-beam recrystallization has been applied to the fabrication of a three-layer processor. The seed structure and the E-beam conditions were successfully optimized so that a large-area SOI as wide as 1 mm was recrystallized without void generation with no damage to underlying devices. The actual SOI area in the device, 850×1100 μm, was recrystallized with one E-beam scan by aligning its position. The three-layer image processor was capable of visual image sensing with a feature outline extraction in a parallel processing manner. Normal operations of the fundamental functions have been confirmed, demonstrating the feasibility of E-beam recrystallization for three-dimensional IC application