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High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

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7 Author(s)
Paschke, K. ; Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany ; Wenzel, H. ; Fiebig, C. ; Blume, G.
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In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a stabilized emission wavelength ~1120 nm. Output powers up to 1 W and a maximum conversion efficiency of ~34% were achieved in a spatial and spectral single-mode. In a preliminary reliability test, at 0.4 W a lifetime of could be demonstrated. Therefore, the laser sources should allow for an efficient non-linear frequency doubling to 560 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 20 )