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Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

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5 Author(s)
Geisz, J.F. ; National Renewable Energy Laboratory, Golden, Colorado 80401, USA ; Steiner, M.A. ; Garcia, I. ; Kurtz, S.R.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4816837 

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.

Published in:

Applied Physics Letters  (Volume:103 ,  Issue: 4 )

Date of Publication:

Jul 2013

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