By Topic

Optimization of Tunneling Magnetoresistance in Perpendicular Magnetic Tunnel Junctions With Co|Pd Reference Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
G. Hu ; IBM-Headway MRAM Alliance, IBM T. J. Watson Research Center, Yorktown Heights, NY, USA ; T. Topuria ; P. M. Rice ; Jean Jordan-Sweet
more authors

We report on the optimization of Co|Pd-multilayer-based reference layers in magnetic tunnel junctions with perpendicular magnetic anisotropy. By inserting a thin Ta-spacer layer between the CoFeB interfacial layer and Co|Pd multilayer, a high tunneling magnetoresistance up to 98.5% can be achieved. Electron energy loss spectroscopy and synchrotron X-ray diffraction studies show that the high magnetoresistance is related primarily to the suppression of Pd diffusion and secondarily to improved CoFeB texture during annealing.

Published in:

IEEE Magnetics Letters  (Volume:4 )