By Topic

Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Hao Li ; State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China ; Xiangbo Zeng ; Ping Yang ; Xiaodong Zhang
more authors

The interface state level at amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions is identified with surface photovoltage spectroscopy (SPS). A positive slope alteration of SPS in 1.2 eV indicates there is a primarily empty state at Ev(c-Si)+0.75 eV. Using hydrogen plasma treatment (HPT) on c-Si surface, we observed a systematic variation in the SPS signal upon HPT time, which was associated to the change of interface state density. Our results show that the SPS can be used to optimize the heterojunction with intrinsic thin-layer solar cell preparation process.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 9 )