By Topic

Extraction of Channel Electron Effective Mobility in InGaAs/Al _{\bf 2} O _{\bf 3} n-FinFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yaodong Hu ; State Key Lab ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China ; Shengwei Li ; Guangfan Jiao ; Y. Q. Wu
more authors

A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2/V·s at low Vg - Vth bias at room temperature and decreases with increasing Vg, and increases with increasing temperature (240-332K). It is very different from the case of Si n-MOSFETs, where the electron mobility decreases with increasing temperature. The low channel effective mobility and the ab-normal temperature dependence of μn are ascribed to the high acceptor interface trap and border trap energy densities in the conduction band energy of InGaAs. The ballistic channel resistance RBall at low Vds is calculated and compared with the measured channel resistance RCH. The low transmission coefficient T = RBall/RCH ≈ 0.06 to 0.05 indicates that there is a large room to improve the InGaAs/Al2O3 n-FinFET performance.

Published in:

IEEE Transactions on Nanotechnology  (Volume:12 ,  Issue: 5 )