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High-Performance Flexible {\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO} ReRAM Device for Low-Power Nonvolatile Memory Applications

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3 Author(s)
Mondal, S. ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Ching-Hao Chueh ; Tung-Ming Pan

A high-performance very low-power flexible Ni/Sm2O3/indium tin oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of >103 ON/OFF current ratio with very low switching power of <;25 μW. Good memory retention of >105 at 85°C and switching endurance of 104 program-read-erase-read cycles is achieved in the highly flexible Ni/Sm2O3/ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 9 )