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A high-performance very low-power flexible Ni/Sm2O3/indium tin oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of >103 ON/OFF current ratio with very low switching power of <;25 μW. Good memory retention of >105 at 85°C and switching endurance of 104 program-read-erase-read cycles is achieved in the highly flexible Ni/Sm2O3/ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.