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In this letter, the specific contact resistivity of metal on n-doped germanium is significantly reduced to 3.8×10-7 Ω·cm2 by P+ multiple implantation and multiple annealing (MIMA) technique. The dramatic reduction of specific contact resistivity is attributed to the enhanced activation of n-type dopants, and a high electrical activation over 1×1020 cm-3 is demonstrated by the spreading resistance profiling analysis. In addition, the fabricated germanium n+/p diode by P+ MIMA technique exhibits an ION/IOFF ratio over 105 with low ideality factor of 1.11. The low specific contact resistivity of metal on n-doped germanium and well-behaved germanium n+/p diode are beneficial for the performance improvement of Ge nMOSFETs.