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A unique and novel, 60 μm deep trench and refill process for manufacturing Si-based Super-Junction device structures for high-voltage applications beyond 600 V is discussed on the following pages. We combine an etching-process with a DCS-HCl epitaxial growth method to achieve a homogenous refilling of the generated deep-trench structures with oppositely charged dopants. Utilizing numerical process simulations, we demonstrate the advantage of the trench and refill technological approach as compared to the more established multiple-epitaxy and implantation manufacturing method. In order to experimentally validate the homogeneity of our refilling procedure, we perform secondary electron potential contrast as well as nanoscaled scanning capacitance microscopy measurements on our fabricated micro-structures.