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Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET

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2 Author(s)
Ram Krishna Ghosh ; Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India ; Santanu Mahapatra

We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.

Published in:

IEEE Transactions on Nanotechnology  (Volume:12 ,  Issue: 5 )