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Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlO _{bm x} /SiN _{bm x} Dielectric Stacks

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6 Author(s)
Duttagupta, S. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Fa-Jun Ma ; Lin, S.F. ; Mueller, T.
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We report an outstanding level of surface passivation for both n+ and p+ silicon by AlOx/SiNx dielectric stacks deposited in an inline plasma-enhanced chemical vapor deposition (PECVD) reactor for a wide range of sheet resistances. Extremely low emitter saturation current densities (J0e) of 12 and 200 fA/cm2 are obtained on 165 and 25 Ω/sq n+ emitters, respectively, and 8 and 45 fA/cm2 on 170 and 30 Ω/sq p+ emitters, respectively. Using contactless corona-voltage measurements and device simulations, we demonstrate that the surface passivation mechanism on both n+ and p + silicon is primarily due to a relatively low interface defect density of <;1011 eV-1cm-2 in combination with a moderate fixed negative charge density of (1-2) × 1012 cm-2. From advanced modeling, the fundamental surface recombination velocity parameter is shown to be in the order of 104 cm/s for PECVD AlOx/SiNx passivated heavily doped n+ and p+ silicon surfaces.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 4 )

Date of Publication:

Oct. 2013

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