Referenced Items are not available for this document.
Conventional and resonant cavity enhanced heterojunction phototransistors (RCE-HPT) based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy (MBE) have been successfully fabricated and characterized for the first time to operate at near 2.2-/spl mu/m wavelength range at room temperature (RT). By incorporating a ten-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, a strong cavity enhancement of the photoresponse at the resonant wavelength has been realized. A factor of 3.8 improvement in the absolute responsivity and an optical gain of 2.2 at the resonant wavelength of 2.16 /spl mu/m at RT have been measured from the RCE-HPT.
Published in:
Photonics Technology Letters, IEEE
(Volume:10
,
Issue:
2
)
Date of Publication: Feb. 1998
- Page(s):
- 258 - 260
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5833534
- Digital Object Identifier :
- 10.1109/68.655377
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb. 1998
- Sponsored by :
- IEEE Photonics Society
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