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Resonant cavity enhanced heterojunction phototransistors based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy

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5 Author(s)
Yan Shi ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA ; Zhao, J.H. ; Sarathy, J. ; Olsen, G.H.
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Conventional and resonant cavity enhanced heterojunction phototransistors (RCE-HPT) based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy (MBE) have been successfully fabricated and characterized for the first time to operate at near 2.2-/spl mu/m wavelength range at room temperature (RT). By incorporating a ten-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, a strong cavity enhancement of the photoresponse at the resonant wavelength has been realized. A factor of 3.8 improvement in the absolute responsivity and an optical gain of 2.2 at the resonant wavelength of 2.16 /spl mu/m at RT have been measured from the RCE-HPT.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 2 )

Date of Publication:

Feb. 1998

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