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GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

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7 Author(s)
M. C. Larson ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; M. Kondow ; T. Kitatani ; K. Nakahara
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Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm2, slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95/spl deg/C.

Published in:

IEEE Photonics Technology Letters  (Volume:10 ,  Issue: 2 )