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GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

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7 Author(s)
Larson, M.C. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Kondow, M. ; Kitatani, T. ; Nakahara, K.
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Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 /spl mu/m, threshold current density of 3.1 kA/cm/sup 2/, slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-/spl mu/m-diameter devices. Laser oscillation is observed for temperatures at high as 95/spl deg/C.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 2 )

Date of Publication:

Feb. 1998

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