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Si-Ge-Silica Monolithic Integration Platform and Its Application to a 22-Gb/s \times 16-ch WDM Receiver

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9 Author(s)
Hiraki, T. ; NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan ; Nishi, H. ; Tsuchizawa, T. ; Rai Kou
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We describe a Si-Ge-silica monolithic integration platform for telecommunications applications. The monolithic integration process features low-temperature silica film deposition by electron-cyclotron-resonance chemical vapor deposition to prevent thermal damage to Si/Ge active devices. The monolithically integrated Si and SiOx waveguides show propagation losses of 2.8 and 0.9 dB/cm, and the inverse-tapered spot-size converters show a coupling loss of 0.35 dB. We applied the platform to a 22-Gb/s × 16-ch wavelength-division multiplexing receiver, in which a 16-ch SiOx arrayed waveguide grating (AWG) with 1.6-nm channel separation and Ge photodiodes (PDs) are monolithically integrated. The AWG-PD device exhibits fiber-to-PD responsivity of 0.29 A/W and interchannel crosstalk of less than -22 dB and successfully receives 22-Gb/s signal for all 16 channels. In addition, we demonstrate 40-km transmission of 12.5-Gb/s signal and obtain sensitivity of -6.8 dBm at a bit error rate of 10-9 without transimpedance amplifiers.

Published in:

Photonics Journal, IEEE  (Volume:5 ,  Issue: 4 )