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Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

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8 Author(s)
Han, Sang-Heon ; LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, South Korea ; Lee, Dong-Yul ; Shim, Hyun-Wook ; Wook Lee, Jeong
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We demonstrate a high efficiency and an improvement of the electrical properties in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) using intentionally formed V-shaped pits. Efficiency droop behaviors are measured and LEDs with V-shaped pits act like LEDs with a low dislocation density. The reverse voltage at -10 μA of LEDs with V-shaped pits shows -120 V, which is comparable to p-i-n rectifiers grown on a free-standing GaN, and reverse leakage current is decreased indicating electrical passivation of dislocation. A calculated diode ideality factor shows that electron tunneling at low forward voltage is suppressed in LEDs with V-shaped pits.

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Applied Physics Letters  (Volume:102 ,  Issue: 25 )