By Topic

Planar silicon nitride mid-infrared devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tai Lin, Pao ; Materials Processing Center, Massachusetts Institute of technology, Cambridge, Massachusetts 02139, USA ; Singh, Vivek ; Kimerling, Lionel ; Murthy Agarwal, Anuradha

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4812332 

Integrated mid-infrared devices including (i) straight/bent waveguides and (ii) directional couplers are demonstrated on silicon nitride (SiN) thin films prepared by optimized low-pressure chemical vapor deposition. The deposited SiN film has a broad spectral transparency from visible up to a wavelength of λ = 8.5 μm (as seen from Fourier transform infrared spectroscopy). Our SiN waveguide shows a dominant fundamental mode with an optical loss of 2.1 dB/cm at λ = 3.7 μm. In addition, we demonstrate an efficient SiN directional coupler between λ = 3.55 μm to λ = 3.75 μm where an 8 dB extinction ratio is achieved within each channel upon wavelength scanning. With the inherent advantage of complementary metal–oxide–semiconductor compatibility, our SiN platform paves the way to create sophisticated photonic circuits that are desired for mid-infrared nonlinear light generation and chip-scale biochemical sensors.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 25 )