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Design Considerations for a Fast Stacked-MOSFET Switch

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5 Author(s)
Sack, M. ; Inst. for Pulsed Power & Microwave Technol., Karlsruhe Inst. of Technol., Eggenstein-Leopoldshafen, Germany ; Keipert, S. ; Hochberg, M. ; Greule, M.
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For fast pulse generators using pulse-forming lines for energy storage, a fast MOSFET is employed as switch. It needs to have the capability of switching on the current within a short rise time. Fast switching of MOSFET requires the gate driver next to MOSFET in order to minimize the inductance. To increase the voltage switching capability of a MOSFET switch, several MOSFETs are switched in series. For such a configuration, a synchronous switching of MOSFETs is crucial. Hence, the gate drive circuitry needs to be designed to have equal propagation delay for each MOSFET. The circuitry for two stages of a stacked MOSFET switch including power supply and trigger circuit is designed, set up, and tested. The paper describes some design considerations and shows the results of some first tests.

Published in:

Plasma Science, IEEE Transactions on  (Volume:41 ,  Issue: 10 )

Date of Publication:

Oct. 2013

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