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Wavelength Selectable Hybrid III–V/Si Laser Fabricated by Wafer Bonding

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11 Author(s)
Liepvre, A.L. ; III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA Leti, Palaiseau cedex, France ; Accard, A. ; Poingt, F. ; Jany, C.
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This letter reports on a hybrid III–V on silicon arrayed waveguide grating laser, fabricated by a wafer bonding technique. The III–V materials provide the optical gain for the laser while an arrayed waveguide grating and Bragg reflectors on silicon on insulator complete the cavity for single mode selection and laser feedback. The laser shows a threshold current {\sim}{\rm 40}~{\rm mA} , and a maximum coupled power to a single mode fiber of {-}{\rm 2.2}~{\rm dBm} . Independent lasing of five wavelength channels spaced by 392 GHz is demonstrated.

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Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 16 )