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SiGe Quantum Dots Over Si Pillars for Visible to Near-Infrared Broadband Photodetection

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5 Author(s)
Wei-Ting Lai ; Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan ; Po-Hsiang Liao ; Homyk, A.P. ; Scherer, A.
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We demonstrate a successful selective growth of Si0.3Ge0.7 quantum dots (QDs) over array of p+-Si nanopillars using a low-pressure chemical vapor deposition technique, and hereafter realized high-performance QD broadband photodiodes for visible to near-infrared photodetection based on heterostructures of indium tin oxide/Si0.3Ge0.7 QD/Si pillar. Thanks to effective hole confinement and thus a built-in electric field within the SiGe QD, high ratios of photocurrent to dark current of ~2200, 100, and 30, respectively, were measured on our SiGe QDs-based photodiodes under illumination of 9 mW/cm2 at wavelength of 500-800, 1300, and 1500 nm. The QD photodiode exhibits a very low dark current density of 3.2 × 10-8 A/cm2 and a tunable power-dependent linearity by applied voltage through the competition of electron drift and carrier recombination processes.

Published in:

Photonics Technology Letters, IEEE  (Volume:25 ,  Issue: 15 )