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Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

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6 Author(s)
Gupta, Shashank ; Applied Materials, Inc., Santa Clara, California 94085, USA ; Paramahans Manik, Prashanth ; Kesh Mishra, Ravi ; Nainani, Aneesh
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Metal-induced-gap-states model for Fermi-level pinning in metal-semiconductor contacts has been extended to metal-interfacial layer (IL)-semiconductor (MIS) contacts using a physics-based approach. Contact resistivity simulations evaluating various ILs on n-Ge indicate the possibility of forming low resistance contacts using TiO2, ZnO, and Sn-doped In2O3 (ITO) layers. Doping of the IL is proposed as an additional knob for lowering MIS contact resistance. This is demonstrated through simulations and experimentally verified with circular-transfer length method and diode measurements on Ti/n+-ZnO/n-Ge and Ti/ITO/n-Ge MIS contacts.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 23 )

Date of Publication:

Jun 2013

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