By Topic

Ultrafast Photoexcitation and Transient Mobility of GaP for Photoconductive Terahertz Emission

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Collier, C.M. ; Univ. of British Columbia, Kelowna, BC, Canada ; Born, B. ; Bethune-Waddell, M. ; Xian Jin
more authors

The prospects for photoconductive (PC) terahertz (THz) generation are studied for wide-bandgap semiconductors exhibiting transient mobility. Such semiconductors offer practical benefits (by resisting dielectric breakdown and minimizing Joule heating) as well as improved frequency responses (by accentuating high-frequency PC THz emission). It is shown that GaP can offer these wide-bandgap and transient mobility characteristics. The ultrafast photoexcitation and subsequent transient mobility are investigated for a GaP PC THz emitter with photoexcitation fluences of 18, 36, and 72 μJ/cm2. The 100 fs rise and 700 fs fall in the transient photocurrent, due to the respective photoexcitation and transient mobility responses, yields far-field THz emission that improves upon that of the well-established GaAs PC THz emitter. It is ultimately found that semiconductors with both wide-bandgap and transient mobility characteristics can offer strategic improvements for emerging high-power PC THz technologies.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:49 ,  Issue: 8 )