Referenced Items are not available for this document.
In this paper we describe the temperature difference method (TDM) as a promising technology for the continuous growth of thin film silicon from the solution on large area polycrystalline substrates (10×10 cm2). The thermodynamic driving force of the layer growth by TDM is generated by a temperature gradient perpendicular to the substrate surface. Silicon thin films have been grown from In/Ga-solutions at 980°C. A temperature gradient of 10 K/cm allows a growth rate of 0.3 μm/min. Doping concentrations from 1016 to 2×1018 cm-3 are adjustable. Minority charge carrier life times of 5-10 μs were determined in 30 μm thick layers by TRMC (time resolved microwave conductivity) measurements. Additionally first growth results of Si-LPE on silicon seeded substrates are presented
Published in:
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Date of Conference: 29 Sep-3 Oct 1997
- Page(s):
- 771 - 774
- Meeting Date :
- 29 Sep 1997-03 Oct 1997
- ISSN :
- 0160-8371
- Print ISBN:
- 0-7803-3767-0
- INSPEC Accession Number:
- 5889513
- Conference Location :
- Anaheim, CA
- Digital Object Identifier :
- 10.1109/PVSC.1997.654203
- Product Type:
- Conference Publications
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