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ZnO(CdS)/CIS/Mo solar cells characterized by modulation capacitance voltage measurements

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5 Author(s)
Ngo Duong Sinh ; Hahn-Meitner-Inst., Berlin, Germany ; R. Scheer ; K. Kliefoth ; W. Fussel
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From modulation capacitance voltage (MCV) measurements we determined a voltage Vs of several hundred mV at the depletion region in CuInS2 under PV generator and short circuit working conditions. In this solar cell type electron transport through shallow gap states in the CdS interlayer enhances interface recombination which increases the dark current. The CuInSe2 solar cells show a different behaviour. In darkness, electron emission into the depletion region over a barrier of more than 500 mV was measured, and voltage losses while working as PV generator remain nearly constant below 60 mV. We interpret these results by a blocking CuInS2/Mo contact and a band spike at the CdS/CuInSe2 junction

Published in:

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Date of Conference:

29 Sep-3 Oct 1997