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On the role of Na and modifications to Cu(In,Ga)Se2 absorber materials using thin-MF (M=Na, K, Cs) precursor layers [solar cells]

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9 Author(s)
Contreras, M.A. ; Nat. Renewable Energy Lab., Golden, CO, USA ; Egaas, B. ; Dippo, P. ; Webb, J.
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The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin film solar cells under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural and electronic absorber properties due to the presence of such Group Ia impurities are quantified along with their influence in device performance. The authors present a growth model for the role of Na in Cu(In,Ga)Se2 that attributes the enhancements in electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu) at the bulk and grain-boundary regions

Published in:

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Date of Conference:

29 Sep-3 Oct 1997

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