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Silicon solar cell emitters: optimization and comparison of two different technologies

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2 Author(s)
M. Cid ; Lab. de Microelectron., Sao Paulo Univ., Brazil ; N. Stem

Considering recent modifications on n-type highly doped silicon parameters, a new emitter optimization was made based on one-dimensional models with analytical solutions. In order to obtain good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and locally deep diffused (LDD), with Gaussian profile of n +pp+ solar cells were optimized. According to the authors' results: homogeneous emitter solar cells show their maximum efficiencies (η≅ 21.60-21.74%) with doping levels Ns=1×1019-5×1018 (cm-3 ) and (1.2-2.0) μm emitter thickness range. LDD emitter solar cells provide a slightly higher efficiency (η=21.82-21.92%), with N s=1×1020 (cm-3) With 2.0 μm thickness under metal-contacted surface and Ns=1×1019-5×1018 (cm-3 ) with (1.2-2.0) μm thickness range, (sheet resistance range 90-100 Ω) under passivated surface. Although LDD emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable

Published in:

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Date of Conference:

29 Sep-3 Oct 1997