By Topic

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
James R. Schwank ; Sandia National Laboratories, Albuquerque, NM, USA ; Marty R. Shaneyfelt ; Paul E. Dodd

This document gives detailed test guidelines for single-event upset (SEU), single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) hardness assurance testing. It includes guidelines for both heavy-ion and proton environments. The guidelines are based on many years of testing at remote site facilities and our present understanding of the mechanisms for single-event effects.

Published in:

IEEE Transactions on Nuclear Science  (Volume:60 ,  Issue: 3 )