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Displacement Damage Effects in Irradiated Semiconductor Devices

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2 Author(s)
J. R. Srour ; Aerospace Corporation, Los Angeles, CA, USA ; J. W. Palko

A review of radiation-induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of defect clusters and isolated defects are addressed. Displacement damage effects in materials and devices are considered, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells. Additional topics examined include NIEL scaling, carrier concentration changes, random telegraph signals, radiation hardness assurance, and simulation methods for displacement damage. Areas needing further study are noted.

Published in:

IEEE Transactions on Nuclear Science  (Volume:60 ,  Issue: 3 )