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STI Crater Defect Reduction for Semiconductor Device Yield Improvement

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4 Author(s)
Li Liang ; Adv. Module Technol. Div., Globalfoundries Singapore PTE Ltd., Singapore, Singapore ; Rao Xue Song ; Lu Wei ; Alex, S.

One type of yield killing defect called STI Crater is found on advanced CMOS devices during shallow trench isolation (STI) formation. The mechanism of the defect formation is discussed, and various cleaning and thermal treatment applications have been evaluated to eliminate the defects. We observe above 6% yield improvement with optimized cleaning process scheme.

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:26 ,  Issue: 3 )