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Low-Voltage Double-Gate ZnO Thin-Film Transistor Circuits

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4 Author(s)
Li, Y.V. ; Dept. of Electr. Eng., Penn State Univ., University Park, PA, USA ; Ramirez, J.I. ; Sun, K.G. ; Jackson, T.N.

In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain >100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 7 )