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We present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9% 3-dB bandwidth.