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A 5-Bit 1.25-GS/s 4x-Capacitive-Folding Flash ADC in 65-nm CMOS

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6 Author(s)
Chi-Hang Chan ; State-Key Laboratory of Analog and Mixed Signal VLSI, Faculty of Science and Technology, University of Macau, Macao, China ; Yan Zhu ; Sai-Weng Sin ; Seng-Pan U
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This paper presents a 5-bit 1.25-GS/s folding flash ADC. The prototype achieves a folding factor of four with a capacitive folding technique that only consumes dynamic power. Incorporated with various calibration schemes, folding errors and the comparator's threshold inaccuracies are corrected, thus allowing a low input capacitance of 80 fF. The design is fabricated using 65-nm digital CMOS technology and occupies 0.007 mm 2. The maximum DNL and INL post calibration are 0.67 and 0.47 LSB, respectively. Measurement results show that the ADC can achieve 1.25 GS/s at 1-V supply with a total power consumption of 595 μW. In addition, it exhibits a mean ENOB of 4.8b at dc among ten chips, which yields an FoM of 17 fJ/conversion-step.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:48 ,  Issue: 9 )