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InP-DHBT-on-BiCMOS Technology With f_{T}/f_{\max } of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

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14 Author(s)
Kraemer, T. ; Ferdinand-Braun-Inst., Leibniz-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany ; Ostermay, I. ; Jensen, T. ; Johansen, T.K.
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This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <; 0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.

Published in:

Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 7 )

Date of Publication:

July 2013

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