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Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

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12 Author(s)
Bin Liu ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Chunlei Zhan ; Yue Yang ; Ran Cheng
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We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process optimization on epitaxial growth of Ge on patterned GeOI samples is discussed. Process integration of Ge:B RSD into Ge MuGFETs using a CMOS compatible process flow is documented. Electrical characteristics of Ge MuGFETs with RSD are reported.

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Electron Devices, IEEE Transactions on  (Volume:60 ,  Issue: 7 )