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A Bistable Silicon Nanofin: An Ideal Device for Nonvolatile Memory Applications

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4 Author(s)
Bo Woon Soon ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Singh, N. ; Tsai, J. ; Chengkuo Lee

We present a silicon nanofin (Si-NF) that can be actuated bidirectionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force, which holds the Si-NF to either terminal without an on-hold bias, thus exhibiting bistable hysteresis behavior. The measured pull-in voltage (VPI) and reset voltage (VRESET) are 10 and -12 V, respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, it can be an ideal device for nonvolatile memory (NVM) applications.

Published in:

Nanotechnology Magazine, IEEE  (Volume:7 ,  Issue: 2 )