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High-Performance Gate-All-Around Poly-Si Thin-Film Transistors by Microwave Annealing With NH _{\rm 3} Plasma Passivation

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5 Author(s)
Mu-Shih Yeh ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Yao-Jen Lee ; Min-Feng Hung ; Kuan-Cheng Liu
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This paper introduces nanoscale gate-all-around (GAA) n-MOS polycrystalline silicon thin-film transistors (poly-Si TFTs) by using microwave annealing (MWA). Experimental results of MWA GAA poly-Si TFTs indicate high performances with subthreshold swing (SS) of 105 mV/dec., and ION/IOFF ratio of 107 A/A. MWA reveals sufficient dopant activation efficiency, which is equivalent to rapid thermal annealing. Additionally, the short channel effect is reduced owing to the low-temperature process of MWA and superior gate control of the GAA structure. Moreover, using NH3 plasma treatment further improves the device mobility, ION/IOFF ratio, and SS. Importantly, the proposed MWA GAA poly-Si TFT with its high performance and low-temperature process is highly promising for advanced 3-D ICs.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:12 ,  Issue: 4 )

Date of Publication:

July 2013

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