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Optical response of DyN

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9 Author(s)
Azeem, M. ; The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University, P.O. Box 600, Wellington 6140, New Zealand ; Ruck, B.J. ; Do Le, Binh ; Warring, H.
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We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements, these identify DyN as a semiconductor with an optical energy gap of 1.2 eV. When doped with nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0 ± 0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and a dielectric strength of Δε=20.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 20 )