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Hole Mobility Enhancement in Compressively Strained {\rm Ge}_{0.93}{\rm Sn}_{0.07} pMOSFETs

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5 Author(s)
Suyog Gupta ; Department of Electrical Engineering, Stanford University, Stanford, CA, USA ; Yi-Chiau Huang ; Yihwan Kim ; Errol Sanchez
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Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 7 )