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A dual-channel isolated resonant gate driver for low gate drive loss in ZVS Full-bridge converters

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4 Author(s)
Zhiliang Zhang ; Jiangsu Key Lab. of New Energy Generation & Power Conversion, Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China ; Fei-Fei Li ; Fanghua Zhang ; Yan-Fei Liu

As the switching frequency increases, to reduce the gate drive loss combined with the Zero-Voltage-Switching (ZVS) technique is meaningful for the widely used Full-Bridge (FB) converters. A dual-channel isolated Resonant Gate Driver (RGD) is proposed in this paper. The proposed RGD is able to provide two isolated complementary drive signals for two power MOSFETs in one bridge leg. Furthermore, the proposed RGD reduces about 79% gate drive loss compared to the conventional Voltage Source Driver (VSD). In addition, the negative gate drive voltage provided by the proposed RGD prevents the false trigger problem. The optimum design of the proposed RGD is given in detail. A 200-VDC input, 48-V/20-A output and 500-kHz phase-shift ZVS FB converter with the proposed RGD was built to verify the advantage and efficiency improvement.

Published in:

Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE

Date of Conference:

17-21 March 2013