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Impact of Electroforming Current on Self-Compliance Resistive Switching in an {\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN} Structure

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12 Author(s)
Hsueh-Chih Tseng ; Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Ting-Chang Chang ; Yi-Chun Wu ; Sei-Wei Wu
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This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 7 )

Date of Publication:

July 2013

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