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RadFET sensors are used for Total Ionizing Dose (TID) monitoring inside CERN accelerators. While RadFET sensors are typically well characterized with a Co-60 gamma source, their radiation response can be affected when they are used in high-energy mixed particle fields. This paper presents experimental results and corresponding discussions on the effect of CERN accelerator-like environments on the dose measured by 100 nm, 400 nm and 1000 nm thick oxide RadFETs. Simulations of the radiation environment at the CERN test areas have also been performed to investigate the contribution of each particle type to the deposited dose and are used as a tool to understand the observed effects.