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Radiation Effects in Flash Memories

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8 Author(s)
Gerardin, S. ; Dipt. di Ing. dell'Inf., Univ. di Padova, Padua, Italy ; Bagatin, M. ; Paccagnella, A. ; Grurmann, K.
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We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.

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Nuclear Science, IEEE Transactions on  (Volume:60 ,  Issue: 3 )